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FDC637BNZ

Fairchild Semiconductor
Part Number FDC637BNZ
Manufacturer Fairchild Semiconductor
Description MOSFET
Published Jan 11, 2017
Detailed Description FDC637BNZ N-Channel 2.5V Specified PowerTrench® MOSFET FDC637BNZ N-Channel 2.5V Specified PowerTrench® MOSFET 20V, 6.2...
Datasheet PDF File FDC637BNZ PDF File

FDC637BNZ
FDC637BNZ

Overview
FDC637BNZ N-Channel 2.
5V Specified PowerTrench® MOSFET FDC637BNZ N-Channel 2.
5V Specified PowerTrench® MOSFET 20V, 6.
2A, 24mΩ Features General Description September 2007 tm „ Max rDS(on) = 24mΩ at VGS = 4.
5V, ID = 6.
2A „ Max rDS(on) = 32mΩ at VGS = 2.
5V, ID = 5.
2A „ Fast switching speed „ Low gate charge (8nC typical) „ High performance trench technology for extremely low rDS(on) „ SuperSOT™–6 package: small footprint (72% smaller than standard SO-8; low profile (1mm thick) „ HBM ESD protection level > 2kV typical (Note 3) „ Manufactured using green packaging material „ Halide-Free „ RoHS Compliant This N-Channel 2.
5V specified MOSFET is produced using Fairchild Semiconductor’s advanc...


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