MOSFET
Description
FDC610PZ P-Channel PowerTrench® MOSFET
FDC610PZ
P-Channel PowerTrench® MOSFET
–30V, –4.9A, 42mΩ Features
General Description
August 2007
tm
Max rDS(on) = 42mΩ at VGS = –10V, ID = –4.9A Max rDS(on) = 75mΩ at VGS = –4.5V, ID = –3.7A Low gate charge (17nC typical).
High performance trench technology for extremely low rDS(on). SuperSOTTM –6 packag...
Fairchild Semiconductor
FDC610PZ PDF File
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