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FDU6N20

Fairchild Semiconductor
Part Number FDU6N20
Manufacturer Fairchild Semiconductor
Description MOSFET
Published Jan 12, 2017
Detailed Description FDD6N20 / FDU6N20 N-Channel MOSFET FDD6N20 / FDU6N20 N-Channel MOSFET 200V, 4.5A, 0.8Ω Features • RDS(on) = 0.6Ω ( Typ....
Datasheet PDF File FDU6N20 PDF File

FDU6N20
FDU6N20

Overview
FDD6N20 / FDU6N20 N-Channel MOSFET FDD6N20 / FDU6N20 N-Channel MOSFET 200V, 4.
5A, 0.
8Ω Features • RDS(on) = 0.
6Ω ( Typ.
)@ VGS = 10V, ID = 2.
3A • Low gate charge ( Typ.
4.
7nC ) • Low Crss ( Typ.
6.
3pF ) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant May 2007 UniFETTM tm Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high...


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