Insulated Gate Bipolar Transistor
Description
VCES = 650V IC = 60A, TC =100°C
IRGP4263DPbF IRGP4263D-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
C
tSC 5.5µs, TJ(max) = 175°C
VCE(ON) typ. = 1.7V @ IC = 48A
Applications Industrial Motor Drive UPS Solar Inverters Welding
G
E
n-channel
G Gate
GCE
IRGP4263DPbF TO‐247AC
C Collector
E GC
IRGP4263D‐EPbF TO...
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