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TC511001P-10

Toshiba
Part Number TC511001P-10
Manufacturer Toshiba
Description DRAM
Published Jan 16, 2017
Detailed Description TOSHIBA MOS MEMORY PRODUCT 1,048,576 WORDS X 1 BIT DYNAMIC RAM SILICON GATE CMOS DESCRIPTION TC511001 P/J/Z-S5, TC5110...
Datasheet PDF File TC511001P-10 PDF File

TC511001P-10
TC511001P-10

Overview
TOSHIBA MOS MEMORY PRODUCT 1,048,576 WORDS X 1 BIT DYNAMIC RAM SILICON GATE CMOS DESCRIPTION TC511001 P/J/Z-S5, TC511001 P/J/Z-l0 TC511 001 P/J/Z-12 The TC5ll00lP/J/Z is the new generation dynamic R&~ organized 1,048,576 ~vords by 1 bit.
The TC5ll00lP/J/Z utilizes TOSHIBA's caos Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user.
Multiplexed address inputs permit the TC5ll00lP/J/Z to be packaged in a standard 18 pin plastic DIP, 26/20 pin plastic SOJ and 20/19 pin plastic ZIP.
The package size provides high system bit "densities and is compatible with widely available automated testing and insertion equipment.
System oriented features include single power supply of 5V±10% tolerance, direct interfacing capability with high performance logic families such as Schottky TTL.
The special feature of TC5Il00IP/J/Z is nibble mode, allowing the user to serially access 4 bits of data at a high data r...


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