MOSFET
Description
FCH170N60 — N-Channel SuperFET® II MOSFET
FCH170N60
N-Channel SuperFET® II MOSFET
600 V, 22 A, 170 m
July 2014
Features
650 V @TJ = 150°C Typ. RDS(on) = 150 m Ultra Low Gate Charge (Typ. Qg = 42 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 190 pF) 100% Avalanche Tested
RoHS Compliant
Applications
Telecom / Sever Power Supplies ...
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