MOSFET
Description
FQH35N40 400V N-Channel MOSFET
FQH35N40
400V N-Channel MOSFET
Features
35A, 400V, RDS(on) = 0.105Ω @VGS = 10 V Low gate charge ( typical 110 nC) Low Crss ( typical 65 pF) Fast switching 100% avalanche tested Improved dv/dt capability
July 2005
QFET®
Description
These N-Channel enhancement mode power field effect transistors are produced using F...
Fairchild Semiconductor
FQH35N40 PDF File
Similar Datasheet
- FQH35N40 MOSFET - Fairchild Semiconductor