IGBT
Description
FGH30T65UPDT — 650 V, 30 A Field Stop Trench IGBT
November 2013
FGH30T65UPDT
650V, 30A Field Stop Trench IGBT
Features
Maximum Junction Temperature : TJ = 175oC Positive Temperaure Co-efficient for Easy Parallel Operating High Current Capability Low Saturation Voltage: VCE(sat) = 1.65 V (Typ.) @ IC = 30 A 100% of Parts Tested ILM(2) High Input...
Similar Datasheet
- FGH30T65UPDT IGBT - Fairchild Semiconductor