Advanced N-Ch Power MOSFET
Description
SMN18T50FD
Advanced N-Ch Power MOSFET
SWITCHING REGULATOR APPLICATION
Features
Drain-Source breakdown voltage: BVDSS = 500V Low gate charge: Qg=65nC (Typ.) Low drain-source On resistance: RDS(on)=0.21Ω (Typ.) 100% avalanche tested
RoHS compliant device
Ordering Information
Part Number
Marking
Package
SMN18T50FD
SMN18T50
TO-220F-3L
GDS
TO-...
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