SNN4010D
N-Ch Trench MOSFET
Power Switching Application
Features
Drain-source breakdown voltage: BVDSS=100V Low gate charge device
Low drain-source On resistance: RDS(on)=25mΩ (Typ.) Advanced trench process technology
High avalanche energy, 100% test
Ordering Information
Part Number
Marking
Package
SNN4010D
SNN4010
TO-252
D
G S
TO-252
...
