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SMK0160IS
Advanced N-Ch Power MOSFET
Description
SMK0160IS Advanced N-Ch Power MOSFET SWITCHING
REGULATOR
APPLICATION Features Drain-Source breakdown voltage: BVDSS=600V (Min.) Low gate charge: Qg=3.9nC (Typ.) Low drain-source On resistance: RDS(on)=11.5Ω (Max.) 100% avalanche tested RoHS compliant device Ordering Information Part Number SMK0160IS Marking SMK0160 Package I-PAK (Short Lead) ...
KODENSHI KOREA
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