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K20E60U

Toshiba
Part Number K20E60U
Manufacturer Toshiba
Description Silicon N-Channel MOSFET
Published Jan 25, 2017
Detailed Description MOSFETs Silicon N-Channel MOS (DTMOS) TK20E60U 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain...
Datasheet PDF File K20E60U PDF File

K20E60U
K20E60U

Overview
MOSFETs Silicon N-Channel MOS (DTMOS) TK20E60U 1.
Applications • Switching Voltage Regulators 2.
Features (1) Low drain-source on-resistance: RDS(ON) = 0.
165 Ω (typ.
) (2) High forward transfer admittance: |Yfs| = 12 S (typ.
) (3) Low leakage current: IDSS = 100 µA (max) (VDS = 600 V) (4) Enhancement mode: Vth = 3.
0 to 5.
0 V (VDS = 10 V, ID = 1 mA) 3.
Packaging and Internal Circuit TK20E60U 1: Gate (G) 2: Drain (D)(Heatsink) 3: Source (S) TO-220 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 600 V Gate-source voltage VGSS ±30 Drain current (DC) Drain current (pulsed) Power dissipation Single-p...


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