DatasheetsPDF.com

QH8K26

ROHM
Part Number QH8K26
Manufacturer ROHM
Description Small Signal MOSFET
Published Jan 25, 2017
Detailed Description QH8K26 　　40V Nch + Nch Small Signal MOSFET VDSS RDS(on)(Max.) ID PD 40V 38mΩ ±7.0A 2.6W lFeatures 1) Low on - resista...
Datasheet PDF File QH8K26 PDF File

QH8K26
QH8K26

Overview
QH8K26 　　40V Nch + Nch Small Signal MOSFET VDSS RDS(on)(Max.
) ID PD 40V 38mΩ ±7.
0A 2.
6W lFeatures 1) Low on - resistance 2) Small Surface Mount Package (TSMT8) 3) Pb-free lead plating ; RoHS compliant 4) Halogen Free lOutline TSMT8 　 　　　　　　 lInner circuit 　　 Datasheet 　 lPackaging specifications Packing lApplication Reel size (mm) Switching Motor Drive Type Tape width (mm) Quantity (pcs) Taping code Marking lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Avalanche current, single pulse Avalanche energy, single pulse Power dissipation (total) Junction temperature Operating junction and storage temperature range VDSS ID*1 IDP*2 VGSS IAS*3 EAS*3 PD*1 PD*4 PD*5 Tj Tstg 40 ±7.
0 ±18 ±12 12 1.
0 2.
6 1.
5 1.
1 150 -55 to +150 Embossed Tape 180 8 3000 TR K26 Unit V A A V A mJ W ℃ ℃ 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　 www.
rohm.
com © 2019 ROHM Co.
, Ltd.
All rights reserved.
1/11 20190527 - Rev.
003 　 　 QH8K26 　 　 　 　　 　 lThermal resistance Parameter Thermal resistance, junction - ambient (total) 　 　 　 　 　 　 　 　 Datasheet 　 　 　　　　　　　　　　　　　 　 　 　 Symbol RthJA*4 RthJA*5 Values Min.
Typ.
Max.
- - 83.
3 - - 113 Unit ℃/W lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Drain - Source breakdown voltage Breakdown voltage temperature coefficient Zero gate voltage drain current Gate - Source leakage current Gate threshold voltage Gate threshold voltage temperature coefficient Static drain - source on - state resistance Gate resistance Forward Transfer Admittance V(BR)DSS VGS = 0V, ID = 1mA ΔV(BR)DSS ID = 1mA 　 ΔTj 　referenced to 25℃ IDSS VDS = 40V, VGS = 0V IGSS VGS = ±12V, VDS = 0V VGS(th) VDS = 10V, ID = 1mA ΔVGS(th) ID = 1mA 　 ΔTj 　referenced to 25℃ RDS(on)*6 RG VGS = 10V, ID = 7.
0A VGS = 4.
5V, ID = 5.
0A f = 1MHz, o...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)