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RF4E100AJ

ROHM
Part Number RF4E100AJ
Manufacturer ROHM
Description Power MOSFET
Published Jan 25, 2017
Detailed Description RF4E100AJ 　　Nch 30V 10A Middle Power MOSFET 　　 Datasheet VDSS RDS(on)(Max.) ID PD 30V 12.4mΩ ±10A 2.0W lFeatures 1) ...
Datasheet PDF File RF4E100AJ PDF File

RF4E100AJ
RF4E100AJ

Overview
RF4E100AJ 　　Nch 30V 10A Middle Power MOSFET 　　 Datasheet VDSS RDS(on)(Max.
) ID PD 30V 12.
4mΩ ±10A 2.
0W lFeatures 1) Low on - resistance.
2) High power small mold package 　　(HUML2020L8).
3) Pb-free lead plating ; RoHS compliant 4) Halogen free 5) 100% Rg and UIS tested.
lOutline DFN2020-8S HUML2020L8 　 　　　　　　 lInner circuit lPackaging specifications Packing Reel size (mm) lApplication Switching Type Tape width (mm) Quantity (pcs) DC/DC converter Taping code Battery switch Marking lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Avalanche current, single pulse Avalanche energy, single pulse Power dissipation Junction temperature Operating junction and storage temperature range VDSS ID IDP*1 VGSS IAS*2 EAS*2 PD*3 Tj Tstg 30 ±10 ±36 ±12 2.
7 6.
7 2.
0 150 -55 to +150 　 Embossed Tape 180 8 3000 TCR HV Unit V A A V A mJ W ℃ ℃ 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　 www.
rohm.
com © 2019 ROHM Co.
, Ltd.
All rights reserved.
1/11 20190527 - Rev.
002 　 　 RF4E100AJ 　 　 　 　　 　 lThermal resistance Parameter Thermal resistance, junction - ambient 　 　 　 　 　 　 　 　 Datasheet 　 　 　　　　　　　　　　　　　　　　 Symbol RthJA*3 Values Min.
Typ.
Max.
- - 62.
5 Unit ℃/W lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = 1mA Breakdown voltage temperature coefficient 　ΔV(BR)DSS　 ID = 1mA 　　 ΔTj 　 　 referenced to 25℃ Zero gate voltage drain current IDSS VDS = 30V, VGS = 0V Gate - Source leakage current IGSS VGS = ±12V, VDS = 0V Gate threshold voltage Gate threshold voltage temperature coefficient VGS(th) VDS = VGS , ID = 1mA 　ΔVGS(th) 　 ID = 1mA 　　 ΔTj 　 　 referenced to 25℃ Static drain - source on - state resistance RDS(on)*4 VGS = 4.
5V, ID = 10A VGS = 2.
5V, ID = 5.
0A Gate resistance RG f=1MHz, open drain Forwa...


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