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RQ5E035BN

ROHM
Part Number RQ5E035BN
Manufacturer ROHM
Description Power MOSFET
Published Jan 25, 2017
Detailed Description RQ5E035BN 　　Nch 30V 3.5A Power MOSFET VDSS RDS(on)(Max.) ID PD 30V 37mΩ 1W lFeatures 1) Low on - resistance. 2) Built...
Datasheet PDF File RQ5E035BN PDF File

RQ5E035BN
RQ5E035BN

Overview
RQ5E035BN 　　Nch 30V 3.
5A Power MOSFET VDSS RDS(on)(Max.
) ID PD 30V 37mΩ 1W lFeatures 1) Low on - resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TSMT3).
4) Pb-free lead plating ; RoHS compliant lOutline TSMT3 SC-96 SOT-346T 　　　　　　 lInner circuit 　　 Datasheet 　　　　　　 　 　 　 　　　　　　 lApplication Switching lAbsolute maximum ratings (Ta = 25°C) Parameter Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Avalanche energy, single pulse Avalanche current Power dissipation Junction temperature Range of storage temperature lPackaging specifications Packing Reel size (mm) Type Tape width (mm) Basic ordering unit (pcs) Taping code Marking Embossed Tape 180 8 3000 TL ZS Symbol Value Unit VDSS 30 V ID*1 ID,pulse*2 ±12 A VGSS ±20 V EAS*3 1.
9 mJ IAS*3 3.
5 A PD*4 1 W Tj 150 ℃ Tstg -55 to +150 ℃ 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　 www.
rohm.
com © 2015 ROHM Co.
, Ltd.
All rights reserved.
1/11 20150730 - Rev.
002 　 　 RQ5E035BN 　 　 　 　　 　 lThermal resistance Parameter Thermal resistance, junction - ambient 　 　 　 　 　 　 　 　 Datasheet 　 　 　　　　　　　　　　　　　　　　 Symbol RthJA*4 Values Unit Min.
Typ.
Max.
- 125 - ℃/W lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = 1mA Breakdown voltage temperature coefficient 　ΔV(BR)DSS　 ID = 1mA 　　 ΔTj 　 　 referenced to 25℃ Zero gate voltage drain current IDSS VDS = 30V, VGS = 0V Gate - Source leakage current IGSS VGS = ±20V, VDS = 0V Gate threshold voltage VGS(th) VDS = VGS, ID = 1mA Gate threshold voltage temperature coefficient 　ΔVGS(th) 　 ID = 1mA 　　 ΔTj 　 　 referenced to 25℃ Static drain - source on - state resistance RDS(on)*5 VGS = 10V, ID = 3.
5A VGS = 4.
5V, ID = 3.
5A Gate input resistance RG f = , open drain Forward Transfer Admittance |Yfs|*5 VDS = 5V, ID = 3.
5A Values Unit Min.
Typ.
Max.
3...


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