Semiconductor
□ Application
LNA and wide band amplifier up to GHz range
□ Features
o Low Noise Figure NF = 1.1 dB at f = 1 GHz, VCE = 8 V, IC = 5 mA
o High Power Gain MAG =18 dB at f = 1 GHz, VCE = 8 V, IC =15 mA
o High Transition Frequency fT = 10 GHz at VCE = 8 V, IC = 15 mA
THN6301 Series
SiGe NPNTransistor
SOT-523
Unit in mm
□ hFE Classification
Mar...
