Semiconductor
□ Application
LNA and wide band amplifier up to GHz range
□ Features
o Low Noise Figure NF = 1.0 dB at f = 1 GHz, VCE = 3 V, IC = 7 mA
o High Power Gain MAG = 15 dB at f = 1 GHz, VCE = 3 V, IC = 7 mA
o High Transition Frequency fT = 9 GHz at VCE = 3 V, IC = 30 mA
THN6501 Series
SiGe NPNTransistor
SOT-523
Unit in mm
□ hFE Classification
Mar...
