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P2206BD

Part Number	P2206BD
Manufacturer	UNIKC
Description	N-Channel Transistor
Published	Feb 1, 2017
Detailed Description	P2206BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 22.5mΩ @VGS = 10V ID 32A TO-252 AB...
Datasheet	P2206BD PDF File

Overview

P2206BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 22.
5mΩ @VGS = 10V ID 32A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC= 25 °C TC= 100 °C ID IDM 32 20 100 Avalanche Current IAS 26 Avalanche Energy L=0.
1mH EAS 33.
8 Power Dissipation TC= 25 °C TC= 100°C PD 50 20 Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperatur...

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