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P6503FM

UNIKC
Part Number P6503FM
Manufacturer UNIKC
Description P-Channel MOSFET
Published Feb 2, 2017
Detailed Description P6503FM P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 65mΩ @VGS = -4.5V ID -3.6A SOT-23...
Datasheet PDF File P6503FM PDF File

P6503FM
P6503FM

Overview
P6503FM P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 65mΩ @VGS = -4.
5V ID -3.
6A SOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±12 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM -3.
6 -3 -19 Avalanche Current IAS -19 Avalanche Energy L = 0.
1mH EAS 18 Power Dissipation TA = 25 °C TA = 70 °C PD 1 0.
5 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
SYMBOL RqJA TYPICAL MAXIMUM UNITS 130 °C / W REV 1.
1 1 2016/1/22 P6503FM P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Th...


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