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P5506BVG

UNIKC
Part Number P5506BVG
Manufacturer UNIKC
Description N-Channel MOSFET
Published Feb 3, 2017
Detailed Description P5506BVG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 55mΩ @VGS =10V ID 5.5A SOP- 08 AB...
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P5506BVG
P5506BVG

Overview
P5506BVG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 55mΩ @VGS =10V ID 5.
5A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 Continuous Drain Current1 Tc = 25 °C Tc = 70 °C ID 5.
5 4.
5 Pulsed Drain Current IDM 20 Power Dissipation2 Tc = 25 °C Tc = 70 °C PD 2.
5 1.
3 Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
2Duty cycle  1% SYMBOL RqJC RqJA TYPICAL 17 37 MAX...


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