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PV6A6BA

UNIKC
Part Number PV6A6BA
Manufacturer UNIKC
Description MOSFET
Published Feb 3, 2017
Detailed Description PV6A6BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 40V 9mΩ @VGS = 10V ID 10.9A SOP-8 ABSO...
Datasheet PDF File PV6A6BA PDF File

PV6A6BA
PV6A6BA

Overview
PV6A6BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 40V 9mΩ @VGS = 10V ID 10.
9A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 40 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM 10.
9 8.
7 44 Avalanche Current IAS 31 Avalanche Energy L =0.
1mH EAS 48 Power Dissipation TA= 25 °C TA =70 °C PD 2.
2 1.
4 Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient RqJA 55 Junction-to-Case RqJC 2...


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