MOSFET
Description
PB5A2BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20V 9mΩ @VGS = 4.5V
ID 11A
PDFN 2X2S
100% RG Test 100% UIL Test
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 20
Gate-Source Voltage
VGS ±8
Continuous Drain Current Pulsed Drain Current1
...
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