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PZ2003EEA

UNIKC
Part Number PZ2003EEA
Manufacturer UNIKC
Description MOSFET
Published Feb 4, 2017
Detailed Description PZ2003EEA P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 20mΩ @VGS = -10V ID ...
Datasheet PDF File PZ2003EEA PDF File

PZ2003EEA
PZ2003EEA

Overview
PZ2003EEA P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 20mΩ @VGS = -10V ID -28A PDFN 3x3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage Gate-Source Voltage VDS -30 VGS ±25 TC = 25 °C -28 Continuous Drain Current Pulsed Drain Current1 Avalanche Current TC = 100 °C TA = 25 °C TA = 70 °C ID IDM IAS -17 -8.
4 -7 -70 -30 Avalanche Energy L = 0.
1mH EAS 45 TC = 25 °C 25 Power Dissipation TC = 100 °C TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range PD TJ, TSTG 10 2.
2 1.
4 -55 to 150 UNITS V A mJ W °C REV 1.
1 1 2014/7/21 PZ2003EEA P-Channel Logic Level Enhancement Mode MOSFET THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 Steady-State RqJA 55 Junction-to-Case Steady-State RqJC 5 1Pulse width limited by maximum junction temperature.
2The value of RqJA is measure...


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