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PI632BZ

UNIKC
Part Number PI632BZ
Manufacturer UNIKC
Description MOSFET
Published Feb 6, 2017
Detailed Description PI632BZ N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 3.7mΩ @VGS = 10V ID 105A TO-251(IS)...
Datasheet PDF File PI632BZ PDF File

PI632BZ
PI632BZ

Overview
PI632BZ N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 3.
7mΩ @VGS = 10V ID 105A TO-251(IS) 1.
GATE 2.
DRAIN 3.
SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 105 66 200 Avalanche Current IAS 40.
8 Avalanche Energy L = 0.
1mH EAS 83 Power Dissipation TC = 25 °C TC = 100 °C PD 74 29 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1...


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