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P0903BDA

UNIKC
Part Number P0903BDA
Manufacturer UNIKC
Description MOSFET
Published Feb 6, 2017
Detailed Description P0903BDA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 9mΩ @VGS = 10V ID 56A TO-252 ABSO...
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P0903BDA
P0903BDA

Overview
P0903BDA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 9mΩ @VGS = 10V ID 56A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC= 25 °C TC= 100 °C ID IDM 56 35 160 Avalanche Current IAS 31 Avalanche Energy L=0.
1mH EAS 48 Power Dissipation TC= 25 °C TC= 100°C PD 48 19 Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case 1Pulse width limited by maximum junction temperature.
SYMBOL RqJC TYPICAL MAXIMUM UNITS 2.
6 °C / W REV 1.
0 1 2014/5/7 P0903BDA N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Bo...


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