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P8008BD
N-Channel MOSFET
Description
P8008BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 80V 80mΩ @VGS = 10V ID 15A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 80 Gate-Source Voltage VGS ±25 Continuous Drain Current Pulsed Drain Current1 Avalanche Current1 TC = 25 °C ...
UNIKC
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