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PD606BA

Part Number	PD606BA
Manufacturer	UNIKC
Description	N-Channel MOSFET
Published	Feb 7, 2017
Detailed Description	PD606BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 18mΩ @VGS = 10V ID 24A TO-252 ABSO...
Datasheet	PD606BA PDF File

Overview

PD606BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 18mΩ @VGS = 10V ID 24A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC= 25 °C TC= 100 °C ID IDM 24 15 60 Avalanche Current IAS 12.
7 Avalanche Energy L=0.
1mH EAS 8.
1 Power Dissipation TC= 25 °C TC= 100°C PD 19.
5 7.
8 Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction tempera...

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PD606BA N-Channel MOSFET - UNIKC

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