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P0806ATF

Part Number	P0806ATF
Manufacturer	UNIKC
Description	N-Channel MOSFET
Published	Feb 9, 2017
Detailed Description	P0806ATF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 8.5mΩ @VGS = 10V ID 57A TO-220F A...
Datasheet	P0806ATF PDF File

Overview

P0806ATF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 8.
5mΩ @VGS = 10V ID 57A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±25 Continuous Drain Current TC = 25 °C TC = 100 °C ID 57 36 Pulsed Drain Current IDM 220 Avalanche Current IAS 64 Avalanche Energy L = 0.
1mH EAS 202 Power Dissipation TC = 25 °C TC = 100 °C PD 50 20 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
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