Dual N-Channel Enhancement Mode MOSFET
Description
PZ558EZ
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 3Ω @VGS = 4V
ID 0.2A
SOT-363
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±16
Continuous Drain Current1 Pulsed Drain Current2
TA = 25 °C TA = 70 °C
ID IDM
0.24 0.17 0.7
Power Dis...
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