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SDA10S120

SemiSouth

Silicon Carbide Power Schottky Diode


Description
PRELIMINARY Silicon Carbide Power Schottky Diode Features: - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior - 175 °C Maximum Operating Temperature - Zero Reverse Recovery Current - Zero Forward Recovery Voltage 3 Silicon Carbide SDA10S120 Product Summary VDC 1200 V IF 10 A Qc 40 nC K(3) Applicati...



SemiSouth

SDA10S120

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