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RSD100N10

ROHM
Part Number RSD100N10
Manufacturer ROHM
Description MOSFET
Published Feb 10, 2017
Detailed Description 4V Drive Nch MOSFET RSD100N10  Structure Silicon N-channel MOSFET Features 1) Low on-resistance. 2) 4V drive. 3) High...
Datasheet PDF File RSD100N10 PDF File

RSD100N10
RSD100N10

Overview
4V Drive Nch MOSFET RSD100N10  Structure Silicon N-channel MOSFET Features 1) Low on-resistance.
2) 4V drive.
3) High power package.
 Application Switching  Packaging specifications Package Type Code Basic ordering unit (pieces) RSD100N10 Taping TL 2500  Data Sheet 1.
5 9.
5  Dimensions (Unit : mm) CPT3 (SC-63) 6.
5 5.
1 2.
3 0.
5 0.
9 5.
5 1.
5 0.
75 0.
9 2.
3 (1) (2) 0.
65 (3) 2.
3 0.
8Min.
2.
5 0.
5 1.
0  Inner circuit ∗1 ∗2 (1) Gate (2) Drain (3) Source (1) (2) (3) 1 ESD PROTECTION DIODE 2 BODY DIODE  Absolute maximum ratings (Ta = 25C) Parameter Symbol Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Continuous Pulsed Continuous Pulsed VDSS VGSS ID *3 IDP *1 IS *3 ISP *1 PD *2 Tch Range of storage temperature Tstg Limits 100 20 10 20 10 20 20 150 55 to 150 *1 PW10s, Duty cycle1% *2 TC=25°C *3 Please use within the range of SOA.
...


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