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ET-20N50
N-Channel MOSFET
Description
Features ■ RDS(on) (Max 0.26 Ω )@VGS=10V ■ Gate Charge (Typical 90nC) ■ Improved dv/dt Capability, High Ruggedness ■ 100% Avalanche Tested ■ Maximum Junction Temperature Range (150°C) ET-20N50 N-Channel MOSFET Symbol 1. Gate{ { 2. Drain ● ◀▲ ● ● { 3. Source General Description This Power MOSFET is manufactured advanced planar stripe, DMOS technology. Thi...
ESTEK
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ET-20N50
N-Channel MOSFET
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