Dual N-Channel MOSFET
Description
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
DFNWB2×3-6L-C Plastic-Encapsulate MOSFETS
CJCD2005
V(BR)DSS
20V
Dual N-Channel MOSFET
RDS(on)MAX
13mΩ@10V 14mΩ @4.5V 15.5mΩ@3.8V 19 mΩ@2.5V 27mΩ@1.8V
ID
8A
DFNWB2× -6L-C
DESCRIPTION The CJCD2005 uses advanced trench technology to provide
excellent RDS(ON) and low gate charge. It is ESD protected...
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