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TC74HC11AP

Toshiba
Part Number TC74HC11AP
Manufacturer Toshiba
Description Triple 3-Input AND Gate
Published Mar 1, 2017
Detailed Description TC74HC11AP/AF TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74HC11AP, TC74HC11AF Triple 3-Input AND Gate ...
Datasheet PDF File TC74HC11AP PDF File

TC74HC11AP
TC74HC11AP

Overview
TC74HC11AP/AF TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74HC11AP, TC74HC11AF Triple 3-Input AND Gate The TC74HC11A is a high speed CMOS 3-INPUT AND GATE fabricated with silicon gate C2MOS technology.
It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation.
The internal circuit is composed of 4 stages including a buffer output, which provide high noise immunity and stable output.
All inputs are equipped with protection circuits against static discharge or transient excess voltage.
Features • High speed: tpd = 7 ns (typ.
) at VCC = 5 V • Low power dissipation: ICC = 1 μA (max) at Ta = 25°C • High noise immunity: VNIH = VNIL = 28% VCC (min) • Output drive capability: 10 LSTTL loads • Symmetrical output impedance: |IOH| = IOL = 4 mA (min) • Balanced propagation delays: tpLH ∼− tpHL • Wide operating voltage range: VCC (opr) = 2 to 6 V • Pin and function compatible with 74LS11 Pin Assignment TC74HC11AP TC74HC11AF Weight DIP14-P-300-2.
54 SOP14-P-300-1.
27A : 0.
96 g (typ.
) : 0.
18 g (typ.
) IEC Logic Symbol Start of commercial production 1986-11 1 2014-03-01 Truth Table TC74HC11AP/AF A B C Y L X X L X L X L X X L L H H H H X: Don’t care Absolute Maximum Ratings (Note 1) Characteristics Symbol Rating Unit Supply voltage range DC input voltage DC output voltage Input diode current Output diode current DC output current DC VCC/ground current Power dissipation Storage temperature VCC VIN VOUT IIK IOK IOUT ICC PD Tstg −0.
5 to 7 V −0.
5 to VCC + 0.
5 V −0.
5 to VCC + 0.
5 V ±20 mA ±20 mA ±25 mA ±50 mA 500 (DIP) (Note 2)/180 (SOP) mW −65 to 150 °C Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction.
Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in th...


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