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HMC457QS16GE

Analog Devices
Part Number HMC457QS16GE
Manufacturer Analog Devices
Description InGaP HBT
Published Mar 5, 2017
Detailed Description HMC457QS16G / 457QS16GE v03.0907 InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz 11 Typical Applications The HMC457Q...
Datasheet PDF File HMC457QS16GE PDF File

HMC457QS16GE
HMC457QS16GE


Overview
HMC457QS16G / 457QS16GE v03.
0907 InGaP HBT 1 WATT POWER AMPLIFIER, 1.
7 - 2.
2 GHz 11 Typical Applications The HMC457QS16G / HMC457QS16GE is ideal for applications requiring a high dynamic range amplifier: • CDMA & W-CDMA • GSM, GPRS & Edge • Base Stations & Repeaters Features Output IP3: +46 dBm Gain: 27 dB @ 1900 MHz 48% PAE @ +32 dBm Pout +25 dBm W-CDMA Channel Power @ -50 dBc ACPR Integrated Power Control (Vpd) QSOP16G SMT Package: 29.
4 mm2 Included in the HMC-DK002 Designer’s Kit LINEAR & POWER AMPLIFIERS - SMT Functional Diagram General Description The HMC457QS16G & HMC457QS16GE are high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1 watt MMIC power amplifiers...



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