N-Channel Enhancement Mode Field Effect Transistor
Description
CMQ1062
General Description
The CMQ1062 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
Features RDS(ON)<170mΩ @ VGS=10V RDS(ON)<200mΩ @ VGS=4.5V TO-92 Package
Absolute Maximum Ratings
N-Channel Enhancement Mode Field Effect Transistor
Product Summery
BVDSS 100...
Similar Datasheet
