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MSN0650Z

MORESEMI
Part Number MSN0650Z
Manufacturer MORESEMI
Description N-Channel Enhancement Mode Power MOS FET
Published Mar 13, 2017
Detailed Description MSN0650Z 60V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =60V,ID =50A RDS(ON) <20mΩ @ VGS=10V...
Datasheet PDF File MSN0650Z PDF File

MSN0650Z
MSN0650Z


Overview
MSN0650Z 60V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =60V,ID =50A RDS(ON) <20mΩ @ VGS=10V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Lead Free Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply PIN Configuration Marking and pin assignment TO-251 top view Schematic diagram Package Marking and Ordering Information Device Marking Device Device Package MSN0650Z MSN0650Z TO-251 Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current Maximum Power Dissipa...



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