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CY7C2670KV18

Part Number	CY7C2670KV18
Manufacturer	Cypress Semiconductor
Description	144-Mbit DDR II+ SRAM Two-Word Burst Architecture
Published	Mar 14, 2017
Detailed Description	CY7C2670KV18 144-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) with ODT 144-Mbit DDR II+ SRAM ...
Datasheet	CY7C2670KV18 PDF File

Overview

CY7C2670KV18 144-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.
5 Cycle Read Latency) with ODT 144-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.
5 Cycle Read Latency) with ODT Features ■ 144-Mbit density (4 M × 36) ■ 550-MHz clock for high bandwidth ■ Two-word burst for reducing address bus frequency ■ Double data rate (DDR) interfaces (data transferred at 1100 MHz) at 550 MHz ■ Available in 2.
5 clock cycle latency ■ Two input clocks (K and K) for precise DDR timing ❐ SRAM uses rising edges only ■ Echo clocks (CQ and CQ) simplify data capture in high-speed systems ■ Data valid pin (QVLD) to indicate valid data on the output ■ On-die termination (ODT) feature ❐ Supported for D[x:0], BWS[x:0], and K/K inputs ■ Synchronous internally self-timed writes ■ DDR II+ operates with 2.
5-cycle read latency when DOFF is asserted high ■ Operates similar to DDR I device with 1 cycle read latency when DOFF is asserted low ■ Core VDD = 1.
8 V ± 0.
1 V; I/O VDDQ = 1.
4...

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CY7C2670KV18 144-Mbit DDR II+ SRAM Two-Word Burst Architecture - Cypress Semiconductor

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