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WFD5N50

Silicon N-Channel MOSFET

Description

Features ■ 5A,500V,RDS(on)(Max1.6Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 32nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) WFD5N50 Silicon N-Channel MOSFET General Description This Power MO SFET is pro du ced using Winse mi ’s ad van ced plana r stripe, DMOS technology. This latest technology has been es...

Winsemi

WFD5N50 PDF File

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