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WFD20N06

Winsemi
Part Number WFD20N06
Manufacturer Winsemi
Description Silicon N-Channel MOSFET
Published Mar 22, 2017
Detailed Description WFD20N06 Silicon N-Channel MOSFET Features ■ 20A,60V, RDS(on)(Max 39mΩ)@VGS=10V ■ Ultra-low Gate Charge(Typical 6.1nC)...
Datasheet PDF File WFD20N06 PDF File

WFD20N06
WFD20N06

Overview
WFD20N06 Silicon N-Channel MOSFET Features ■ 20A,60V, RDS(on)(Max 39mΩ)@VGS=10V ■ Ultra-low Gate Charge(Typical 6.
1nC) ■ High Current Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MO S FET is produced using Win se m i ’s advanced planar stripe, This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
This devices is specially well suited for high efficiency switch mode power supply.
electronic Lamp ballasts based on half bridge and UPS.
Absolute Maximum Ratings Symbol Parameter V DSS Drain Source Voltage Continuous Drain Current(@Tc=25℃) ID Continuous Drain Current(@Tc=100℃) IDM Drain Current Pulsed tp=10us VGS Gate to Source Voltage-Continuous VGS Gate to Source Voltage-Non-Repetitive(tp<10us) EAS Single Pulsed Avalanche Energy Is Source Current (Body Diode) PD Total Power Dissipation(@Tc=25℃) TJ, Tstg Junction an...


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