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WFP5N60B

Silicon N-Channel MOSFET

Description

Features � 4.5A,600V,RDS(on)(Max2.4Ω)@VGS=10V � Ultra-low Gate charge(Typical 15nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) WFP5N60B Silicon N-Channel MOSFET General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.this latest technology has been especial...

Winsemi

WFP5N60B PDF File

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