Features
□ 33A,100V,RDS(on)(Max0.044Ω)@VGS=10V
□ Ultra-low Gate charge(Typical 25nC) □ Fast Switching Capability □ 100%Avalanche Tested □ Isolation Voltage (VISO=4000V AC) □ Maximum Junction Temperature Range(150℃)
WFP540
Silicon N-Channel MOSFET
General Description
This Power MOSFET is produced using Winsemi's advanced planar stripe, DMOS technology. this...
