K2611B Product Description
Silicon N-Channel MOSFET
Features
� 11A,900V, RDS(on)(Max1.10Ω)@VGS=10V � Ultra-low Gate charge(Typical 66nC) � Fast Switching Capability � 100%Avalanche Tested � Improved dv/dt capability � RoHS product
General Description
This N-Channel enhancement mode power field effect transistors are produced using Winsemi's proprietary, pl...
