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WFF2N60B

Winsemi
Part Number WFF2N60B
Manufacturer Winsemi
Description Power MOSFET
Published Mar 26, 2017
Detailed Description WFF2N60B Product Description Silicon N-Channel MOSFET Features � 2A,600V,RDS(on)(Max 5.0Ω)@VGS=10V � Ultra-low Gate Cha...
Datasheet PDF File WFF2N60B PDF File

WFF2N60B
WFF2N60B


Overview
WFF2N60B Product Description Silicon N-Channel MOSFET Features � 2A,600V,RDS(on)(Max 5.
0Ω)@VGS=10V � Ultra-low Gate Charge(Typical 5.
3nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.
This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics.
This devices is specially well suited for high efficiency switch mode power supply .
D G S Absolute Maximum Ratings Symbol Parameter VDSS ID Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc...



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