DatasheetsPDF.com

WFF20N60S

Winsemi
Part Number WFF20N60S
Manufacturer Winsemi
Description Power MOSFET
Published Mar 27, 2017
Detailed Description WFF20N60S Silicon N-Channel MOSFET Features � Ultra low Rdson � Ultra-low Gate charge(Typical 65nC) � 100% UIS Tested �...
Datasheet PDF File WFF20N60S PDF File

WFF20N60S
WFF20N60S

Overview
WFF20N60S Silicon N-Channel MOSFET Features � Ultra low Rdson � Ultra-low Gate charge(Typical 65nC) � 100% UIS Tested � RoHS compliant General Description Winsemi Power MOSFET is fabricated using advanced super junction technology.
The resulting device has extremely low on resistance,making it especially suitable for applic ations which require superior power density and outstanding efficienc y.
D G S Absolute Maximum Ratings Symbol Parameter VDSS Drain Source Voltage Continuous Drain Current(@Tc=25℃) ID (@Tc=100℃) IDM Drain Current Pulsed1) VGS Gate to Source Voltage EAS Single Pulse Avalanche Energy2) IAR Single Pulse Avalanche Current1) EAR Repetitive Avalanche Energy 1) Total Power Dissipation(@Tc=25℃) PD -Derate above 25℃ TJ Junction Temperature Tstg Storage Temperature IS Continuous diode forward current IS,pulse Diode pulse current Value 600 20 13 60 ±30 700 20 20.
5 34 0.
28 150 -55~150 20 60 Units V A A V mJ A mJ W W/℃ ℃ ℃ A A Thermal Ch...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)