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WFJ8N65B

Winsemi
Part Number WFJ8N65B
Manufacturer Winsemi
Description Power MOSFET
Published Mar 27, 2017
Detailed Description Features � 7.5A,650V,RDS(on)(Max1.3Ω )@VGS=10V � Ultra-low Gate charge(Typical 25nC) � Fast Switching Capability � 100%A...
Datasheet PDF File WFJ8N65B PDF File

WFJ8N65B
WFJ8N65B

Overview
Features � 7.
5A,650V,RDS(on)(Max1.
3Ω )@VGS=10V � Ultra-low Gate charge(Typical 25nC) � Fast Switching Capability � 100%Avalanche Tested � Isolation Voltage (VISO=4000V AC) � Maximum Junction Temperature Range(150℃) WFJ8N65B Silicon N-Channel MOSFET General Description This Power MOSFET is produced using Winsemi's advanced planar stripe, VDMOS technology.
this latest technology has been especially designed to mi nimize on-state resistance, have a high rugged avalanche characteristics .
This devices is specially well suited for half bridge and full bridge resonant topology li ne a electronic lamp ball ast, high efficiency switched mode power suppli es, active power factor correction.
Absolute Maximum Ratings S ym bol Param eter VDSS ID Drain Source Voltage Con tinuous Drain Current(@Tc=25℃) Con tinuous Drain Current(@Tc=100℃) IDM Drain Current Pulsed VGS Gate to Source Voltage EAS Single Pulsed Avalanche Energy EAR Repetitive Avalanche Energy dv/dt Peak Di...


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