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YMP120N06

YM
Part Number YMP120N06
Manufacturer YM
Description N-channel MOSFET
Published Apr 9, 2017
Detailed Description YMP120N06 N-Channel Enhancement Mode Power MOSFET Features ● VDS=70V；ID=120A@ VGS =10V RDS(ON)< 4 mΩ @ VGS =10V ； ● L...
Datasheet PDF File YMP120N06 PDF File

YMP120N06
YMP120N06

Overview
YMP120N06 N-Channel Enhancement Mode Power MOSFET Features ● VDS=70V；ID=120A@ VGS =10V RDS(ON)< 4 mΩ @ VGS =10V ； ● Low gate charge ● Low Crss (typical 197pF) ● Fast switching ● 100% avalanche tested ● Improved dv/dt capability ● Rohs product Product Summary BVDSS typ.
RDS(ON) typ.
max.
ID 60 4 6 120 V mΩ mΩ A 100% UIS TESTED! Application ● High efficiency switch mode power supplies ● UPS TO-220-3L top view Schematic diagram Package Marking And Ordering Information Device Marking Device Device Package YMP120N06 YMP120N06 TO-220-3L Reel Size - Tape width - Quantity - Table 1.
Absolute Maximum Ratings (TA=25℃) Parameter Drain-Source Voltage (VGS=0V） Gate-Source Voltage (VDS=0V) Drain Current (DC) at Tc=25℃ Drain Current (DC) at Tc=100℃ Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation(Tc=25℃) Derating factor Single pulse avalanche energy (Note 2) Operating Junction and Storage Temperature Range Notes 1.
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