VDS 1200 V
CPM2-1200-0040B
Silicon Carbide Power MOSFET TM
C2M MOSFET Technology
ID @ 25˚C 36 A
RDS(on)
40 mΩ
N-Channel Enhancement Mode
Features
Chip Outline
New C2M SiC MOSFET technlogy High Blocking Voltage with Low On-Resistance High Speed Switching with Low Capacitances Easy to Parallel and Simple to Drive Avalanche...
