P-Channel Advanced Power MOSFET
Description
RU1HL8L
P-Channel Advanced Power MOSFET
Features
-100V/-8A, RDS (ON) =350mΩ(Typ.)@VGS=-10V RDS (ON) =400mΩ(Typ.)@VGS=-4.5V
Super High Dense Cell Design
ESD protected
Reliable and Rugged
100% avalanche tested
Lead Free and Green Devices Available (RoHS Compliant)
Pin Description
TO252
Applications
Power Management DC/DC Converters
P-Channe...
Similar Datasheet