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SLD830C

Maple Semiconductor
Part Number SLD830C
Manufacturer Maple Semiconductor
Description N-Channel MOSFET
Published Apr 11, 2017
Detailed Description SLD830C / SLU830C SLD830C/SLU830C 500V N-Channel MOSFET General Description This Power MOSFET is produced using Maple ...
Datasheet PDF File SLD830C PDF File

SLD830C
SLD830C


Overview
SLD830C / SLU830C SLD830C/SLU830C 500V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for low voltage applications such as DC/DC converters and high efficiency switching for power management in portable and battery operated products.
D Features - 4.
0A, 500V, RDS(on) = 1.
5Ω@VGS = 10 V - Low gate charge ( typical 20nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GS D-PAK GDS I-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note ...


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